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AP10G04S SOP-8 N+P沟道场效应管MOSFET永源微

AP10G04S SOP-8 N+P沟道场效应管MOSFET永源微

AP10G04S SOP-8 N+P沟道场效应管MOSFET永源微

The AP10G04S uses advanced trench technologyto provide excellent RDS(ON), low gate charge andoperation with gate voltages as low as 4.5V. Thisdevice is suitable for use as aBattery protection or in other Switching application.
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通盛 产品介绍

Product index

The AP10G04S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.

通盛 订购信息

ordering information
器件类目

产品型号

封装

环境温度

是否在产

应 用 丝 印
N+P AP10G04S

SOP-8

-55 to 150 ℃

无线充电、提升驱动程序、无电刷电动机

AP10G04S

通盛示意图

Sketch Map  

resource/images/cc87e66e446a4e79917dd215d4bed54c_10.jpg

通盛 产品特性

Product characteristics
VDS = 40V ID =9.8A
RDS(ON) < 17mΩ @ VGS=10V
VDS = -40V ID =-7.5A
RDS(ON) < 45mΩ @ VGS=-10V

通盛 应用范围

Scope of application

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Company advantage
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