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The AP130N20P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency
器件类目 |
产品型号 |
封装描述 |
环境温度 |
是否在产 |
应 用 | 丝 印 |
N沟道 | AP130N20MP |
TO-247-3 |
-55~+150 ºC |
是 |
功率放大器、电机驱动装置
|
AP130N20MP |
原装现货,技术选型
云仓现货,快速配送
品类齐全,性能优良
工厂直销,样品申请