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AP130N20MP TO-247-3 N沟道MOS场效应管永源微

AP130N20MP TO-247-3 N沟道MOS场效应管永源微

AP130N20MP TO-247-3 N沟道MOS场效应管永源微

The AP130N20P is silicon N-channel EnhancedVDMOSFETs, is obtained by the self-aligned planar Technologywhich reduce the conduction loss, improve switchingperformance and enhance the avalanche energy. The transistorcan be used in various power switching circuit for systemminiaturization and higher efficiency
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通盛 产品介绍

Product index

The AP130N20P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency

通盛 订购信息

ordering information
器件类目

产品型号

封装

环境温度

是否在产

应 用 丝 印
N沟道 AP130N20MP

TO-247-3

-55~+150 ºC

功率放大器、电机驱动装置

AP130N20MP

通盛示意图

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resource/images/4569c5dbec8946f8b8b9665f71f1e7a9_52.jpg

通盛 产品特性

Product characteristics
VDS =200V,ID =130A
RDS(ON) <23mΩ@ VGS=10V

通盛 应用范围

Scope of application

公司优势

Company advantage
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全

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