AP180N03D TO-252-3L N沟道场效应管MOSFET永源微-伟诠PD协议芯片-茂睿芯主控芯片-同步整流芯片-合金电阻-MOS管-电源芯片-深圳通盛时代

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AP180N03D TO-252-3L N沟道场效应管MOSFET永源微

The AP180N03D uses advanced trench technologyto provide excellent RDS(ON), low gate charge andoperation with gate voltages as low as 4.5V. Thisdevice is suitable for use as a Battery protectionor in other Switching application.

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产品介绍

Product index

The AP180N03D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.

订购信息

ordering information

器件类目

产品型号

封装描述

环境温度

是否在产

应用

丝印

N沟道

AP180N03D

TO-252-3L

-55 to 175 ℃

是

电池保护、负荷开关、不间断电源

AP180N03D

示意图

Sketch Map

resource/images/98aa013f62674404842ce3144b41a64c_40.jpg

产品特性

Product characteristics

VDS=30V ID =180A

RDS(ON) < 3.2mΩ @ VGS=10V （Type：2.1mΩ）

应用范围

Scope of application

: 车充

: 滑板车

: 打火机

: 剃须刀

公司优势

Company advantage

: 正

原装现货，技术选型

: 快

云仓现货，快速配送

: 全

品类齐全，性能优良

: 省

工厂直销，样品申请

技术团队

Technical team

技术团队

通盛仓库

Tongsheng warehouse

通盛仓库

荣誉资质

Honorary qualification

荣誉资质

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contact us

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