AP1N10I SOT23永源微1.5A 100V替换AO3442场效应MOS管-伟诠PD协议芯片-茂睿芯主控芯片-同步整流芯片-合金电阻-MOS管-电源芯片-深圳通盛时代

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AP1N10I SOT23永源微1.5A 100V替换AO3442场效应MOS管

The AP1N10I uses advanced trench technologyto provide excellent RDS(ON), low gate charge andoperation with gate voltages as low as 4.5V. Thisdevice is suitable for use as aBattery protection or in other Switching application.

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产品介绍

Product index

The AP1N10I uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.

订购信息

ordering information

器件类目	产品型号	封装描述	包装数	是否在产	应用	丝印
N沟道增强型	AP1N10I	SOT23	3000/盘	是	电源开关、高频电路不间断电源	MA3

极限参数

Absolute Maximum Ratingss

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产品特性

Product characteristics

VDS=100VID =1.5A
Storage Temperature Range-55to150℃

Gate-Source Voltage ±20V
Operating Junction Temperature Range -55to150℃

应用范围

Scope of application

: 车充

: 滑板车

: 打火机

: 剃须刀

公司优势

Company advantage

: 正

原装现货，技术选型

: 快

云仓现货，快速配送

: 全

品类齐全，性能优良

: 省

工厂直销，样品申请

技术团队

Technical team

技术团队

通盛仓库

Tongsheng warehouse

通盛仓库

荣誉资质

Honorary qualification

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contact us

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