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AP50H03NF2 PDFN5*6-8L N+N通道增强模式MOSFET管

AP50H03NF2 PDFN5*6-8L N+N通道增强模式MOSFET管

AP50H03NF2 PDFN5*6-8L N+N通道增强模式MOSFET管

AP50H03NF2 PDFN5*6-8L N+N通道增强模式MOSFET管

The AP50H03NF2 uses advanced APM-SGT II technologyto provide excellent RDS(ON), low gate charge andoperation with gate voltages as low as 4.5V. Thisdevice is suitable for use as a Battery protection orin other Switching application.
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通盛 产品介绍

Product index

The AP50H03NF2 uses advanced APM-SGT II technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.

通盛 订购信息

ordering information
器件类目

产品型号

封装

环境温度

是否在产

应 用 丝 印
双N沟道 AP50H03NF2

PDFN5*6-8L

-55 to 150 ℃

汽车充电、无线音箱

AP50H03NF2

通盛示意图

Sketch Map

resource/images/576ab5d8d62b4ca6a8d212dd3e913095_8.jpg

通盛 产品特性

Product characteristics
VDS = 30V ID =50A
RDS(ON) <6.0mΩ @ VGS=10V (Type:4.8mΩ)

通盛 应用范围

Scope of application

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Company advantage
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