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AP50P03DF PDFN3*3-8L P沟道场效应管MOSFET永源微

AP50P03DF PDFN3*3-8L P沟道场效应管MOSFET永源微

AP50P03DF PDFN3*3-8L P沟道场效应管MOSFET永源微

The AP50P03DF uses advanced trench technologyto provide excellent RDS(ON), low gate charge andoperation with gate voltages as low as 4.5V. Thisdevice is suitable for use as a Battery protectionor in other Switching application.
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Product index

The AP50P03DF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.

通盛 订购信息

ordering information
器件类目

产品型号

封装

环境温度

是否在产

应 用 丝 印
P沟道 AP50P03DF

PDFN3*3-8L

-55 to 150 ℃

锂电池保护、无线音响、手机快速充电

-

通盛示意图

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resource/images/98aa013f62674404842ce3144b41a64c_28.jpg

通盛 产品特性

Product characteristics
VDS = -30V ID =-50A
RDS(ON) <13mΩ @ VGS=-10V              (Type:8.8mΩ)

通盛 应用范围

Scope of application

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全

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