AP5N50BD TO-252-3L N沟道场效应管MOSFET永源微-伟诠PD协议芯片-茂睿芯主控芯片-同步整流芯片-合金电阻-MOS管-电源芯片-深圳通盛时代

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AP5N50BD TO-252-3L N沟道场效应管MOSFET永源微

The AP5N50BD is silicon N-channel EnhancedVDMOSFETs, is obtained by the self-aligned planar Technologywhich reduce the conduction loss, improve switchingperformance and enhance the avalanche energy. The transistorcan be used in various power switching circuit for systemminiaturization and higher efficiency.

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产品介绍

Product index

The AP5N50BD is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.

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ordering information

器件类目

产品型号

封装描述

环境温度

是否在产

应用

丝印

N沟道

AP5N50BD

TO-252-3L

-55 to 150 ℃

是

不间断电源、功率因数校正（PFC）

AP5N50BD

示意图

Sketch Map

resource/images/98aa013f62674404842ce3144b41a64c_2.jpg

产品特性

Product characteristics

VDS = 500V ID =5A

RDS(ON) < 3.0Ω @ VGS=10V （Type：2.4Ω）

应用范围

Scope of application

: 车充

: 滑板车

: 打火机

: 剃须刀

公司优势

Company advantage

: 正

原装现货，技术选型

: 快

云仓现货，快速配送

: 全

品类齐全，性能优良

: 省

工厂直销，样品申请

技术团队

Technical team

技术团队

通盛仓库

Tongsheng warehouse

通盛仓库

荣誉资质

Honorary qualification

荣誉资质

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contact us

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