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AP5P04MI SOT23-3L P沟道场效应管MOSFET永源微

AP5P04MI SOT23-3L P沟道场效应管MOSFET永源微

AP5P04MI SOT23-3L P沟道场效应管MOSFET永源微

The AP5P04MI uses advanced trench technologyto provide excellent RDS(ON), low gate charge andoperation with gate voltages as low as 4.5V. Thisdevice is suitable for use as a Battery protectionor in other Switching application.
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通盛 产品介绍

Product index

The AP5P04MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.

通盛 订购信息

ordering information
器件类目

产品型号

封装

环境温度

是否在产

应 用 丝 印
P沟道 AP5P04MI

SOT23-3L

-55 to 150 ℃

电池保护、负荷开关、不间断电源

8P04M

通盛示意图

Sketch Map  

resource/images/98aa013f62674404842ce3144b41a64c_4.jpg

通盛 产品特性

Product characteristics
VDS = -40V ID =-5.0A
RDS(ON) < 72mΩ @ VGS=-10V          (Type:65mΩ)

通盛 应用范围

Scope of application

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Company advantage
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全

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