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APG130N06NF PDFN5*6-8L N沟道场效应管MOSFET永源微

APG130N06NF PDFN5*6-8L N沟道场效应管MOSFET永源微

APG130N06NF PDFN5*6-8L N沟道场效应管MOSFET永源微

APG130N06NF use advanced SGT MOSFET technology toprovide low RDS(ON), low gate charge, fast switchingand excellent avalanche characteristics.This device is specially designed to get better ruggednessand suitable to use in
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通盛 产品介绍

Product index

APG130N06NF use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in

通盛 订购信息

ordering information
器件类目

产品型号

封装

环境温度

是否在产

应 用 丝 印
N沟道 APG130N06NF

PDFN5*6-8L

-55 to 150 ℃

电源管理、同步整流隔离直流电

APG130N06NF

通盛示意图

Sketch Map  

resource/images/cc87e66e446a4e79917dd215d4bed54c_40.jpg

通盛 产品特性

Product characteristics
Low RDS(on) & FOM
Extremely low switching loss

通盛 应用范围

Scope of application

公司优势

Company advantage
正

原装现货,技术选型

快

云仓现货,快速配送

全

品类齐全,性能优良

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