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This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
器件类目 | 产品型号 |
封装 |
工作温度 |
是否在产 | 应用 | 丝印 |
N沟道MOS管 | DMN2009LSS |
SO-8 |
-55~+150℃ |
是 |
背后照明、电源管理功能、直流/直流转换器
|
N2009LS |
Low Gate Threshold Voltage
Qualified to AEC-Q101 Standards for High Reliability
原装现货,技术选型
云仓现货,快速配送
品类齐全,性能优良
工厂直销,样品申请