DMT3009LDT-7 封装VDFN3030-8 DIODES美台30V N沟道MOS管-伟诠PD协议芯片-茂睿芯主控芯片-同步整流芯片-合金电阻-MOS管-电源芯片-深圳通盛时代

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DMT3009LDT-7 封装VDFN3030-8 DIODES美台30V N沟道MOS管

N-CHANNEL ENHANCEMENT MODE MOSFET

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产品介绍

Product index

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

订购信息

ordering information

器件类目

产品型号

封装描述

环境温度

是否在产

应用

丝印

N沟道

DMT3009LDT-7

VDFN3030-8

-55~ +150 °C

是

通用接口开关、电源管理功能

2209

示意图

Sketch Map

resource/images/4cf4414cacbb4098a4c5db97c006a275_2.jpg

产品特性

Product characteristics

Case: V-DFN3030-8 (Type K)
Case Material: Molded Plastic, “Green” Molding Compound

Weight: 0.02 grams (Approximate)
Terminals: Finish – NiPdAu over Copper Leadframe

应用范围

Scope of application

: UPS电源

: 手机充电器

: 电源适配器

: 多端口墙壁充电器

公司优势

Company advantage

: 正

原装现货，技术选型

: 快

云仓现货，快速配送

: 全

品类齐全，性能优良

: 省

工厂直销，样品申请

技术团队

Technical team

技术团队

通盛仓库

Tongsheng warehouse

通盛仓库

荣誉资质

Honorary qualification

荣誉资质

联系我们

contact us

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