FDMC3612封装QFN8 ON安森美100V N沟道MOS场效应管-伟诠PD协议芯片-茂睿芯主控芯片-同步整流芯片-合金电阻-MOS管-电源芯片-深圳通盛时代

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FDMC3612封装QFN8 ON安森美100V N沟道MOS场效应管

N-Channel Power Trench® MOSFET 100 V, 12 A, 110 mΩ

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产品介绍

Product index

This N-Channel MOSFET is produced using ON Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

订购信息

ordering information

器件类目

产品型号

封装描述

环境温度

是否在产

应用

丝印

N沟道

FDMC3612

QFN8

-55~150℃

是

DC-DC转换器、PSE开关

FDMC3612

示意图

Sketch Map

resource/images/d91716710b9c438d9897e8c369434ff7_34.jpg

产品特性

Product characteristics

100% UIL Tested
Low Profile - 1 mm max in Power 33

Max rDS(on) = 110mΩ at VGS = 10V, ID = 3.3 A
Max rDS(on) = 122mΩ at VGS = 6V, ID = 3.0 A

应用范围

Scope of application

: UPS电源

: 手机充电器

: 电源适配器

: 多端口墙壁充电器

公司优势

Company advantage

: 正

原装现货，技术选型

: 快

云仓现货，快速配送

: 全

品类齐全，性能优良

: 省

工厂直销，样品申请

技术团队

Technical team

技术团队

通盛仓库

Tongsheng warehouse

通盛仓库

荣誉资质

Honorary qualification

荣誉资质

联系我们

contact us

原装现货厂家代理

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