FDV301N SOT-23 安森美 N沟道MOS场效应管-伟诠PD协议芯片-茂睿芯主控芯片-同步整流芯片-合金电阻-MOS管-电源芯片-深圳通盛时代

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FDV301N SOT-23 安森美 N沟道MOS场效应管

Digital FET, N-Channel FDV301N, FDV301N-F169

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产品介绍

Product index

This N−Channel logic level enhancement mode field effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N−channel FET can replace several different digital transistors, with different bias resistor values.

订购信息

ordering information

器件类目

产品型号

封装描述

环境温度

是否在产

应用

丝印

N沟道

FDV301N

SOT-23

-55 to 150

是

直流转换器、PSE开关

301

示意图

Sketch Map

resource/images/abbc104f8f044385a065d46451cd21c5_14.jpg

产品特性

Product characteristics

VDS(max) =25V
Gate−Source Zener for ESD Ruggedness. > 6 kV Human Body Model

ID (max)=0.22A
Replace Multiple NPN Digital Transistors with One DMOS FET

应用范围

Scope of application

: UPS电源

: 手机充电器

: 电源适配器

: 多端口墙壁充电器

公司优势

Company advantage

: 正

原装现货，技术选型

: 快

云仓现货，快速配送

: 全

品类齐全，性能优良

: 省

工厂直销，样品申请

技术团队

Technical team

技术团队

通盛仓库

Tongsheng warehouse

通盛仓库

荣誉资质

Honorary qualification

荣誉资质

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contact us

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