This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system.
器件类目 |
产品型号 |
封装描述 |
环境温度 |
是否在产 |
应 用 | 丝 印 |
肖特基二极管 | MBRS130LT3G |
SMB |
−65~+125 °C |
是 |
笔记本CPU核心、高侧开关
|
P25 |
原装现货,技术选型
云仓现货,快速配送
品类齐全,性能优良
工厂直销,样品申请