产品介绍ProductidexNS10N65K,theilicoN-chaelEhacedVDMOSFET,iotaiedytheelf-aligedlaarTechologywhichreducethecoductiolo,imrovewitchigerformaceadehacetheavalacheeergy.Thetraitorcaeuedivariouowerwitchigcircuitforytemmiiaturizatioadhigherefficiecy.TheackageformiTO-252,whichaccordwiththeRoHStadard.订......
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NS10N65K, the silicon N-channel Enhanced VDMOSFET, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard.
器件类目 |
产品型号 |
封装描述 |
环境温度 |
是否在产 |
应 用 | 丝 印 |
N沟道 | NS10N65K |
TO252 |
–55~150 ℃ |
是 |
适配器和充电器的电源开关电路
|
NS10N65K |
原装现货,技术选型
云仓现货,快速配送
品类齐全,性能优良
工厂直销,样品申请