PAN3080L TO-252-2L派思迪N沟道场效应管MOS管-伟诠PD协议芯片-茂睿芯主控芯片-同步整流芯片-合金电阻-MOS管-电源芯片-深圳通盛时代

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PAN3080L TO-252-2L派思迪N沟道场效应管MOS管

30V N-channel enhancement modeMOSFET

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产品介绍

Product index

The PAN3080L is a 30V N-channel enhancement mode MOSFET which uses advanced trench technology to provide excellent RDS(on), low gate charge. This device is suitable for use in UPS, power switching and general purpose applications. PAN3080L is packaged in TO-252-2L package.

订购信息

ordering information

器件类目

产品型号

封装描述

环境温度

是否在产

应用

丝印

N沟道

PAN3080L

TO252-2L

-55~+175

是

多电池保护、电池供电系统、UPS、便携式电力设备

PAN3080

测试电路

Test Circuit

resource/images/d276e6d6a1d54f4f9a3f87adfb07408e_30.jpg

产品特性

Product characteristics

ID (max)=80A
Good stability and uniformity
Excellent package for good heat dissipation

VDS(max) =30V
100% avalanche tested
Extremely Low RDS(on): Typ.RDS(on) = 4.0 mΩ @VGS=10 V, ID=40 A

应用范围

Scope of application

: UPS电源

: 手机充电器

: 电源适配器

: 多端口墙壁充电器

公司优势

Company advantage

: 正

原装现货，技术选型

: 快

云仓现货，快速配送

: 全

品类齐全，性能优良

: 省

工厂直销，样品申请

技术团队

Technical team

技术团队

通盛仓库

Tongsheng warehouse

通盛仓库

荣誉资质

Honorary qualification

荣誉资质

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contact us

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