• The TS20DN03is the high cell density trenched Dual N-ch MOSFETS, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.
器件类目 | 产品型号 |
封装 |
工作温度 |
是否在产 | 应用 | 丝印 |
双N沟道MOS | TS20DN03 |
PDFN3X3-8L |
-55~150℃ |
是 |
功率因数校正、开关模式电源、不间断电源 |
304 |
Green Device Available
Excellent CdV/dt effect decline
Super Low Gate Charge
Advanced high cell density Trench technology
原装现货,技术选型
云仓现货,快速配送
品类齐全,性能优良
工厂直销,样品申请