The YXD8205QE1 uses advanced trench technology toprovideexcellent RDS(ON), low gate charge and operation with gatevoltages as low as 2.5V. This device is suitable for use as aBattery protection or in other Switching application.
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器件类目 | 产品型号 | 封装描述 | 包装数 | 是否在产 | 应用 | 丝印 |
N沟道增强型MOSFET |
YXD8205QE1
|
SOT23-6L |
3000/盘 |
是 |
电池保护、负荷开关等 |
8205 |
原装现货,技术选型
云仓现货,快速配送
品类齐全,性能优良
工厂直销,样品申请