The YXD2301FNE1 uses advanced trenchtechnology to provide excellent RDS(ON), lowgate charge and high density cell Design forultra low on-resistance. This device is suitablefor use as a load switch or in PWM applications.
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The YXD2301FNE1 uses advanced trenchtechnology to provide excellent RDS(ON), lowgate charge and high density cell Design forultra low on-resistance. This device is suitablefor use as a load switch or in PWM applications.
器件类目 | 产品型号 | 封装描述 | 包装数 | 是否在产 | 应用 | 丝印 |
P沟道增强型MOSFET |
YXD2301FNE1
|
SOT-23 |
3000/盘 |
是 |
PWM应用程序、负荷开关等
|
2301F |
原装现货,技术选型
云仓现货,快速配送
品类齐全,性能优良
工厂直销,样品申请