The NP3400B uses advanced trench technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on-resistance. This device is suitable for use as a load switch or in PWM applications.
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The NP3400B uses advanced trench technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on-resistance. This device is suitable for use as a load switch or in PWM applications.
器件类目 | 产品型号 | 封装描述 | 包装数 | 是否在产 | 电流 | 丝印 |
N沟道增强型MOSFET | NP3400BVR |
SOT-23 |
3000/盘 |
是 |
车充、滑板车等 |
30BS(仅供参考) |
NP3400MR |
SOT-23 | 3000/盘 |
|
10A(仅供参考) |
(Typ.)=43mΩ@VGS=2.5V RDS(ON)
(Typ.)=31mΩ@VGS=4.5V
原装现货,技术选型
云仓现货,快速配送
品类齐全,性能优良
工厂直销,样品申请