The YXD2301BNE1 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.
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The YXD2301BNE1 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.
器件类目 | 产品型号 | 封装描述 | 包装数 | 是否在产 | 应用 | 丝印 |
P沟道增强型MOSFET | YXD2301BNE1 |
SOT-23 |
3000/盘 |
是 |
车充、滑板车等
|
2301B |
RDS(ON)(Typ.)=170mΩ @VGS=-2.5V
RDS(ON)(Typ.)=130mΩ @VGS=-4.5V
原装现货,技术选型
云仓现货,快速配送
品类齐全,性能优良
工厂直销,样品申请