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P沟道增强型MOSFET

裕芯 MOS管 YXD2301BNE1

The YXD2301BNE1 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. 

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通盛 产品介绍

Product index

The YXD2301BNE1 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. 

通盛 订购信息

ordering information
器件类目 产品型号 封装描述 包装数 是否在产 应用 丝印
P沟道增强型MOSFET YXD2301BNE1

SOT-23

3000/盘

车充、滑板车等

2301B

通盛 极限参数

Typical application circuit

2L(WTLIKLY`@N]]Z(JM4E$9

通盛 产品特性

Product characteristics
Lead free product is acquired
Surface mount package
High power and current handing capability
VDS =-20V,ID =2A

RDS(ON)(Typ.)=170mΩ @VGS=-2.5V

RDS(ON)(Typ.)=130mΩ @VGS=-4.5V

通盛 应用范围

Scope of application

公司优势

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全

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