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裕芯 MOS管 NP6003VR-G

N沟道增强型MOSFET

裕芯 MOS管 NP6003VR-G

The NP6003 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. 

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通盛 产品介绍

Product index

The NP6003 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. 

通盛 订购信息

ordering information
器件类目 产品型号 封装描述 包装数 是否在产 应用 丝印
N沟道增强型MOSFET NP6003VR-G

SOT-23

3000/盘

车充、滑板车等

NP6003

通盛 典型应用电路

Typical application circuit

)D_4L9GXSVK2[`_FVE%71L2

通盛 产品特性

Product characteristics
Fully characterized avalanche voltage and current.
Low gate to drain charge to reduce switchinglosses.
High density cell design for ultra low Rdson.
VDS =30V,ID =5.8A

RDS(ON)(Typ.)=43mΩ@VGS=2.5V

RDS(ON)(Typ.)=31mΩ@VGS=4.5V

通盛 应用范围

Scope of application

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通盛 荣誉资质

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